Critical Dimension and Real-Time Temperature Control for Lithography
نویسندگان
چکیده
In this paper, we present the experimental results on Critical Dimension (CD) control via real-time temperature control for warped wafers. As opposed to run-to-run control where information from the previous wafer or batch is used for control of the current wafer or batch, the approach here is real-time and make use of current information for control of the current wafer CD. In this paper we demonstrate that real-time control of the post-exposure bake temperature to give nonuniform temperature distribution across the warped wafer can reduce CD nonuniformity across the wafer.
منابع مشابه
Predictive Ratio Control of Multizone Thermal Processing System in Lithography
Abstract: Baking of semiconductor substrate is common and critical to photoresist processing in the lithography sequence. Temperature uniformity control is an important issue in photoresist processing with stringent specifications and has a significant impact on the linewidth or critical dimension (CD). In this work, we present the development of a ratio control strategy for controlling tempera...
متن کاملIn-situ Measurement and Control for Photoresist Processing in Microlithography
The lithography process is the critical step in the fabrication of nanostructures for integrated circuit manufacturing. It accounts for one third of the costs of manufacturing integrated circuits. The rapid transition to smaller microelectronic feature sizes involves the introduction of new lithography technologies, new photoresist materials, and tighter processes specifications. This transitio...
متن کاملRIMS (real-time imprint monitoring by scattering of light) study of pressure, temperature and resist effects on nanoimprint lithography
To optimize nanoimprint lithography (NIL), it is essential to be able to characterize and control the NIL process in situ and in real time. Recently we have developed a real-time imprint monitoring by the scattering-of-light (RIMS) approach, which allows us to detect the degree of resist deformation and the duration of resist penetration by a mould during the imprint process in real time. In th...
متن کاملWafer-level and Mask Critical Dimension Metrology
The principal productivity driver for the semiconductor manufacturing industry has been the ability to shrink linear dimensions. A key element of lithography is the ability to create reproducible undistorted images, both for masks and the images projected by these masks onto semiconductor structures. Lithography as a whole, fabricating the masks, printing and developing the images, and measurin...
متن کاملTowards 3nm overlay and critical dimension uniformity: an integrated error budget for double patterning lithography
Double patterning has emerged as the likely lithography technology to bridge the gap between water-based ArF immersion lithography and EUV. The adoption of double patterning is driven by the accelerated timing of the introduction of device shrinks below 40nm half pitch, especially for NAND flash. With scaling, increased device sensitivity to parameter variations puts extreme pressure on control...
متن کامل